Gate planarity for finfet using dummy polish stop

ABSTRACT

A method for forming a semiconductor device includes depositing a dielectric layer over fins formed in a semiconductor substrate. The dielectric layer includes a screen layer over tops of the fins. An etch stop feature is formed on the screen layer. The etch stop feature is patterned down to the screen layer in regions across the device. A dummy gate material formed over the fins is planarized down to the etch stop feature, a dielectric fill between gate structures patterned from the dummy gate material is planarized down to the etch stop feature and a gate conductor is planarized to the etch stop feature.

BACKGROUND

Technical Field

The present invention relates to semiconductor processing, and moreparticularly to methods and devices that provide a reference plane forgate height control and planarity.

Description of the Related Art

Dummy gate height for fin field effect transistor (FinFET) technologieshas not scaled directly from node to node. This often leads to problemsincluding gate structures that are too short. A minimum height is neededto ensure that there is sufficient height for all subtractive processesand their tolerances.

SUMMARY

A method for forming a semiconductor device includes depositing adielectric layer over fins formed in a semiconductor substrate. Thedielectric layer includes a screen layer over tops of the fins. An etchstop feature is formed on the screen layer. The etch stop feature ispatterned down to the screen layer in regions across the device. A dummygate material formed over the fins is planarized down to the etch stopfeature, a dielectric fill between gate structures patterned from thedummy gate material is planarized down to the etch stop feature and agate conductor is planarized to the etch stop feature.

Another method for forming a semiconductor device includes depositing adielectric layer over fins formed in a semiconductor substrate, thedielectric layer including a screen layer over tops of the fins; forminga base layer on the screen layer and an etch stop layer on the baselayer; patterning the etch stop layer and the base layer down to thescreen layer in a plurality of regions across the device; recessing thedielectric layer to expose the fins; depositing conformal screendielectric over the fins and the etch stop layer; depositing dummy gatematerial; planarizing the dummy gate material and stopping on the etchstop layer; patterning gate structures through the dummy gate material;forming a spacer layer over the gate structures; filling spaces betweenthe gate structures with a dielectric fill; recessing the spacers toform divots and expose the dummy gate material; filling the divots;planarizing the dielectric fill and the dummy gate material stopping onthe etch stop layer; forming gate stacks including a gate conductor; andplanarizing the gate conductor stopping on the etch stop layer.

A semiconductor device includes fins formed in a semiconductor substrateand buried in a dielectric layer recessed to form a shallow trenchisolation region, and a screen layer providing a thickness over tops ofthe fins. Gate structures are formed over the fins. At least one etchstop feature is formed on the screen layer to be above a fin height. Theat least one etch stop feature includes a base layer and an etch stoplayer formed on the base layer. The at least one etch stop featureincludes a height to ensure the gate structures formed for the devicehave a minimum gate height after gate formation processing.

These and other features and advantages will become apparent from thefollowing detailed description of illustrative embodiments thereof,which is to be read in connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The disclosure will provide details in the following description ofpreferred embodiments with reference to the following figures wherein:

FIG. 1 is a cross-sectional view of a semiconductor device having finsformed and buried in a dielectric layer in accordance with the presentprinciples;

FIG. 2 is a cross-sectional view of the semiconductor device of FIG. 1having an etch stop feature patterned in accordance with the presentprinciples;

FIG. 3 is a cross-sectional view of the semiconductor device of FIG. 2having the dielectric layer recessed to form a shallow trench isolationin accordance with the present principles;

FIG. 4 is a cross-sectional view of the semiconductor device of FIG. 3showing a liner formed over the fins and the etch stop feature inaccordance with the present principles;

FIG. 5 is a cross-sectional view of the semiconductor device of FIG. 4showing a dummy gate material formed over the fins and planarized to theetch stop feature in accordance with the present principles;

FIG. 6 is a cross-sectional view of the semiconductor device of FIG. 5taken at a section line 90 degrees from the view in FIG. 5, the sectionline being along the fins longitudinally in accordance with the presentprinciples;

FIG. 7 is a cross-sectional view of the semiconductor device of FIG. 6showing a blanket dielectric layer and a hardmask formed in accordancewith the present principles;

FIG. 8 is a cross-sectional view of the semiconductor device of FIG. 7showing the blanket dielectric layer, hardmask and dummy gate materialpatterned in accordance with the present principles;

FIG. 9 is a cross-sectional view of the semiconductor device of FIG. 8showing a spacer layer formed in accordance with the present principles;

FIG. 10 is a cross-sectional view of the semiconductor device of FIG. 9showing a dielectric fill formed in accordance with the presentprinciples;

FIG. 11 is a cross-sectional view of the semiconductor device of FIG. 10showing the spacer layer recessed in accordance with the presentprinciples;

FIG. 12 is a cross-sectional view of the semiconductor device of FIG. 11showing the dielectric fill planarized to the etch stop layer inaccordance with the present principles;

FIG. 13 is a cross-sectional view of the semiconductor device of FIG. 12showing the dummy gate material pulled in accordance with the presentprinciples;

FIG. 14 is a cross-sectional view of the semiconductor device of FIG. 13showing a gate conductor deposited and planarized to the etch stop layerin accordance with the present principles; and

FIG. 15 is a block/flow diagram showing methods for forming asemiconductor device in accordance with illustrative embodiments.

DETAILED DESCRIPTION

In accordance with the present principles, methods and devices areprovided that employ an additional mask process to create a solidreference plane or etch stop(s) for various planarization steps. Inaccordance with useful embodiments, etch stop features are provided toself-limit the planarization processes to ensure that a sufficientheight of the gate structures remains thereafter. The present processespermit a more uniform surface, which provides better control for furtheretching and planarization of structures, especially, e.g., dummy gateplanarization, which can now provide a shallow trench isolation-likepolish. The planarization processes may include a chemical mechanicalpolish (CMP). In one embodiment, CMP stop features are employed thatoverlap with gates that are not active to limit the planarizationprogress. In other embodiments, the additional mask may be employed tocreate other features, such as e.g., polysilicon resistors, capacitors,etc.

In one embodiment, the etch stop features provide a minimum gate height.For example, the gate height needs to be tall enough to permit at leastthe following processes: amorphous Si planarization over fins (dummygate material); poly open chemical mechanical planarization (POC) andreactive ion etching (RIE); replacement metal gate (RMG) processing andplanarization, and any other processing.

It is to be understood that the present invention will be described interms of a given illustrative architecture; however, otherarchitectures, structures, substrate materials and process features andsteps may be varied within the scope of the present invention.

It will also be understood that when an element such as a layer, regionor substrate is referred to as being “on” or “over” another element, itcan be directly on the other element or intervening elements may also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “connected” or “coupled” to another element, it canbe directly connected or coupled to the other element or interveningelements may be present. In contrast, when an element is referred to asbeing “directly connected” or “directly coupled” to another element,there are no intervening elements present.

The present embodiments may include a design for an integrated circuitchip, which may be created in a graphical computer programming language,and stored in a computer storage medium (such as a disk, tape, physicalhard drive, or virtual hard drive such as in a storage access network).If the designer does not fabricate chips or the photolithographic masksused to fabricate chips, the designer may transmit the resulting designby physical means (e.g., by providing a copy of the storage mediumstoring the design) or electronically (e.g., through the Internet) tosuch entities, directly or indirectly. The stored design is thenconverted into the appropriate format (e.g., GDSII) for the fabricationof photolithographic masks, which typically include multiple copies ofthe chip design in question that are to be formed on a wafer. Thephotolithographic masks are utilized to define areas of the wafer(and/or the layers thereon) to be etched or otherwise processed.

Methods as described herein may be used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

It should also be understood that material compounds will be describedin terms of listed elements, e.g., SiGe. These compounds includedifferent proportions of the elements within the compound, e.g., SiGeincludes Si_(x)Ge_(1-x) where x is less than or equal to 1, etc. Inaddition, other elements may be included in the compound and stillfunction in accordance with the present principles. The compounds withadditional elements will be referred to herein as alloys.

Reference in the specification to “one embodiment” or “an embodiment” ofthe present principles, as well as other variations thereof, means thata particular feature, structure, characteristic, and so forth describedin connection with the embodiment is included in at least one embodimentof the present principles. Thus, the appearances of the phrase “in oneembodiment” or “in an embodiment”, as well any other variations,appearing in various places throughout the specification are notnecessarily all referring to the same embodiment.

It is to be appreciated that the use of any of the following “/”,“and/or”, and “at least one of” for example, in the cases of “A/B”, “Aand/or B” and “at least one of A and B”, is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of both options (A andB). As a further example, in the cases of “A, B, and/or C” and “at leastone of A, B, and C”, such phrasing is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of the third listedoption (C) only, or the selection of the first and the second listedoptions (A and B) only, or the selection of the first and third listedoptions (A and C) only, or the selection of the second and third listedoptions (B and C) only, or the selection of all three options (A and Band C). This may be extended, as readily apparent by one of ordinaryskill in this and related arts, for as many items listed.

Referring now to the drawings in which like numerals represent the sameor similar elements and initially to FIG. 1, a partially fabricatedsemiconductor device 10 is shown in accordance with the presentprinciples. The device 10 includes a bulk substrate 12, preferablymonocrystalline Si, although other substrate materials may be employed.The bulk substrate 12 is patterned and etched to form fins 14 therein.The fin patterning process may include a direct lithographic patterningprocess or a spacer imaging transfer (SIT) patterning process to etchportions of the substrate 12.

A dielectric layer 16, e.g., an oxide layer is formed on the substrate12 and over the fins 14 to form a screen (e.g., screen oxide). Thedielectric layer 16 forms a shallow trench isolation (STI) region forlater-formed fin field effect transistors (finFETs). The dielectriclayer 16 is planarized to provide a planar surface. The planar surfaceincludes a thickness 18 over top portions of the fins 14. The thickness18 may be from about 1 nm to about 30 nm, although other thicknesses maybe employed. The thickness 18 may be a separately deposited dielectricmaterial from the STI material of dielectric layer 16. The thickness 18and the dielectric layer 16 are both preferably oxide or at least a samematerial.

Referring to FIG. 2, an etch stop base layer (or base layer) 20 isformed on the dielectric layer 16 followed by an etch stop layer 22. Thebase layer 20 may include an amorphous silicon or a polysiliconmaterial. The etch stop layer may include a nitride material (e.g.,SiN). The etch stop layer 22 and the base layer 20 are patterned to forma stop feature 24. A plurality of stop features 24 are formed across thedevice 10. The stop features 24 may be placed in areas where gates areinactive or in other regions where space may be available. The stopfeatures 24 may have any shape when viewed in a top view. In the exampledepicted, the stop feature 24 does not run over fins 14. However, inother applications, the stop feature 24 may run over fins 14 (e.g.,formed with fins). The fins 14 where the stop feature 24 runs over aremost likely inactive fins, but having these fins in the stop feature mayfurther improve the planarity of structure 10.

Referring to FIG. 3, a fin reveal etch is performed to form a recess 26to expose an upper portion of the fins 14. The dielectric layer 16 isetched selectively to the fins 14 and the layers 20 and 22 of the stopfeatures 24. The fin reveal etch may include a reactive ion etch (RIE)process, a diluted HF wet etch, a combination of these or other etchprocesses.

Referring to FIG. 4, a conformal dielectric layer 28 is formed over thedevice 10 and covers the fins 14 and the stop features 24. The conformaldielectric layer 28 forms a screen to protect the fins 14 in subsequentprocessing. The conformal dielectric layer 28 preferably includes anoxide similar to the dielectric layer 16.

Referring to FIG. 5, a dummy gate layer 30 is deposited on the device10. The dummy gate layer 30 may include amorphous silicon orpolysilicon. The dummy gate layer 30 is then planarized to form a planarsurface. The planarization process may include a chemical mechanicalpolish (CMP) process. The planarization process (CMP) stops on the etchstop layer 22 of the stop feature 24. The CMP provides an STI-likepolish process across the device 10.

Referring to FIG. 6, the device 10 of FIG. 5 is shown in a rotated viewof 90 degrees with a cross-section taken in between fins 14 through thedielectric layer 16. The cross-sectional view depicted in FIG. 6 will beemployed in subsequent FIGS.

Referring to FIG. 7, a blanket dielectric layer 32 is deposited over thesurface of device 10. A hardmask layer 34 is formed on the blanketdielectric layer 32. In one embodiment, the blanket dielectric layer 32includes an oxide material while the hardmask layer 34 includes anitride material. Other materials may be employed that permit selectiveremoval of the layer 32 and 34 with respect to underlying materials.

Referring to FIG. 8, the hardmask 34 is patterned, e.g., using alithography process. The patterned hardmask 34 provides an etch mask forforming dummy gate structures 38 by etching trenches 36 into layer 30.The etch process for forming trenches 36 may include a RIE process.

Referring to FIG. 9, the hardmask 34 is etched down or removedselectively to the blanket dielectric layer 32. A spacer layer 40 isdeposited over the dummy gate structures 38. Liner 40 includes, forexample, nitride or other suitable material. The spacer layer 40 is thenetched (e.g., RIE) to remove the spacer 40 in the area of the fins 14 toexpose the fins (not shown). Since this spacer 40 is removed in avertical fashion, the original (nitride) hardmask 34 and spacer 40 arepulled down vertically. Once the fins are fully exposed, an extensioncan be formed through in-situ doped silicon growth (e.g., BSiGe,phosphorus-doped Si, etc.). The epitaxial growth on the fins can alsostructurally complete source and drain (S/D) formation on the fins asthey create a “platform’ for a contact to land on.

After the epitaxial deposition (not shown), additional liner(s) can bedeposited, if needed. For example, a liner (e.g., nitride) may bedeposited to encapsulate the S/D regions (not shown) from the (flowable)dielectric deposition that follows in FIG. 10.

Referring to FIG. 10, a flowable dielectric material 42 or high adensity plasma (HDP) material is deposited to fill trenches 36. Material42 preferably includes an oxide material. The material 42 is thenplanarized using the poly-open CMP liner 40 as an etch/polish stop.

Referring to FIG. 11, an etch process is performed to open up the dummygates 38. The etch process may include a RIE. The etch process removesthe liner 40 and any remaining remnants of hardmask 34 (if present) fromon top of material 42 and recesses the liner 40 to form divots betweenthe dummy gates 38 and the material 42.

Referring to FIG. 12, the divots 44 are filled by depositing the samematerial as layer 40 (e.g., nitride). Then, a CMP process is performedto polish/planarize the material 42, layer 32 and dummy gate layer 30.The CMP stops of the etch stop layer 22. The etch stop layer 22 and thebase layer (and the dielectric layer 16) are formed to a height H thatensures sufficient material for the gate structures. The CMP processstopping on the etch stop layer 22 ensures that the gate structures havea height that is close to the desired height for the design. Inaddition, a plurality of etch stop features across the device 10 ensuresa uniform planarity to maintain the height across the device 10.

Referring to FIG. 13, a selective etch process is performed to removethe dummy gate layer 30 in a gate pull process. The etch process mayremove a portion of the material 42. The dummy gate removal is part ofreplacement metal gate (RMG) process; however, the present principlesare applicable to gate-first processes where metal gates are formedinstead of dummy gates. The gate pull process removes the dummy gatematerial (e.g., polysilicon) selective to the material 42, layer 40 andlayer 22 (e.g., oxide and nitride). The removal of the dummy gates formsopenings 46 down to layer 16. This exposes the fins (not shown) for theformation of a gate dielectric and gate conductor.

Referring to FIG. 14, a gate dielectric (not shown) is formed in contactwith the fins and a gate conductor 48 is formed over the gate dielectriclayer. The gate conductor 48 may include a metal, such as W, Al, Ti,TiN, TiC, etc. The gate conductor 48 may include multiple layers, e.g.,a work function metal and a main conductor. After the deposition of thegate conductor 48, a planarization process is performed to planarize atop surface and remove excess conductive material. The planarizationprocess may include a CMP process. The CMP process stops on the etchstop layer 22. This preserves the height and the planarity of gatestructures 50. Processing continues and may employ the etch stop layer22 or any portion of the etch stop features 24 in accordance with thepresent principles.

In accordance with the present principles, the thickness of the etchstop layer 22 is determined to withstand the etching/polishing processesof the fabrication method. The etch stop layer 22 may be formed frommultiple layers or have its dimensions configured to expose differentlayers, thicknesses or features at stop points during the polish or etchprocesses.

In one embodiment, the regions where features 24 are formed includeinactive regions, e.g., regions where gates/devices are inactive. Thesilicon-based materials of the base layer 20 may be employed to formother devices, such as fuses, capacitors or resistors. The material ofbase layer 20 is no longer needed after the finFETs are formed. Thiswill repurpose the already deposited material in base layer 20 for auseful function. The base layer 20 may be employed as is (withconnections being formed in a later step), or may be etched to furtherdefine a shape or structure. In many instances, the base layer 20 willbe mixed with a metal to form a metal silicide.

Referring to FIG. 15, a method for forming a semiconductor device isshown in accordance with the present principles. In some alternativeimplementations, the functions noted in the blocks may occur out of theorder noted in the figures. For example, two blocks shown in successionmay, in fact, be executed substantially concurrently, or the blocks maysometimes be executed in the reverse order, depending upon thefunctionality involved. It will also be noted that each block of theblock diagrams and/or flowchart illustration, and combinations of blocksin the block diagrams and/or flowchart illustration, can be implementedby special purpose hardware-based systems that perform the specifiedfunctions or acts or carry out combinations of special purpose hardwareand computer instructions.

In block 102, fins are formed in a substrate by patterning (e.g.,lithographic patterning or spacer image transfer (SIT). In block 104, adielectric layer is deposited over the fins formed in the semiconductorsubstrate. The dielectric layer includes a screen layer, which providesa thickness over tops of the fins. The dielectric layer may be recessedto expose the fins wherein the dielectric layer forms a shallow trenchisolation structure in block 105.

In block 106, an etch stop feature is formed on the screen layer. Theetch stop feature may include multiple layers including differentmaterials (e.g., oxide and nitride layers). In one embodiment, the etchstop feature includes a base layer formed from polysilicon or amorphoussilicon and an etch stop layer formed on the base layer from a nitridematerial (e.g., SiN).

In block 108, the etch stop feature is patterned down to the screenlayer in a plurality of regions across the device. The plurality ofregions may include regions on the device where gates are not active orother available areas in or around an active region (where source anddrain regions are formed for fin field effect transistors (finFETs)formed using the fins). The plurality of regions assists in ensuringplanarity across the device.

In block 110, the etch stop feature(s) is/are employed to ensure that aminimum gate height is preserved after gate formation processing. Theheight of the etch stop feature and in particular the base layer mayrepresent the minimum gate height. The gate formation processing mayinclude, e.g., at least planarizing dummy gate material formed over thefins down to the etch stop feature in block 112, planarizing adielectric fill between gate structures patterned from the dummy gatematerial down to the etch stop feature in block 114; and planarizing agate conductor to the etch stop feature in block 116. In addition tothese processes, other processes may be employed, e.g., these processesmay include forming spacer layers, epitaxially growing source and drainregions on the fins, etc. These other processes may also employ the etchstop features or any portion of the etch stop features.

In block 118, electrical elements/components (e.g., fuses, resistors,capacitors, etc.) may be formed from the base layer. This may includepatterning the base layer, siliciding the base layer and makingconnections to structures formed form the base layer. In otherembodiments, the etch stop features are removed. In block 120,processing continues to complete the device. This may include formingcontacts, metallizations, etc.

Having described preferred embodiments for gate planarity for finFETsusing dummy polish stop (which are intended to be illustrative and notlimiting), it is noted that modifications and variations can be made bypersons skilled in the art in light of the above teachings. It istherefore to be understood that changes may be made in the particularembodiments disclosed which are within the scope of the invention asoutlined by the appended claims. Having thus described aspects of theinvention, with the details and particularity required by the patentlaws, what is claimed and desired protected by Letters Patent is setforth in the appended claims.

1. A semiconductor device, comprising: fins formed in a semiconductorsubstrate and buried in a dielectric layer recessed to form a shallowtrench isolation region; a screen layer providing a thickness over topsof the fins; gate structures formed over the fins; and at least one etchstop feature formed on the screen layer to be above a fin height, the atleast one etch stop feature including a base layer and an etch stoplayer formed on the base layer, the at least one etch stop featureincluding a height to ensure the gate structures formed for the devicehave a minimum gate height after gate formation processing.
 2. Thedevice as recited in claim 1, wherein the etch stop layer includes anitride material.
 3. The device as recited in claim 1, wherein the baselayer includes polysilicon or amorphous silicon employed to formelectrical elements from the base layer.
 4. The device as recited inclaim 1, wherein the at least one etch stop feature includes a pluralityof etch stop features disposed in a plurality of regions on the device.5. The device as recited in claim 4, wherein the plurality of regions onthe device includes regions on the device where gates are not active. 6.The device as recited in claim 1, further comprising a dielectric fillplanarized to down to the etch stop feature between gate structures. 7.The device as recited in claim 1, wherein the etch stop feature includesmultiple layers including different materials.
 8. The device as recitedin claim 1, wherein the gate structures include spacers formed onsidewalls of the gate structures.
 9. The device as recited in claim 1,wherein the base layer is employed to form a fuse.
 10. The device asrecited in claim 1, wherein the base layer is employed to form acapacitor.
 11. The device as recited in claim 1, wherein the base layeris employed to form a resistor.
 12. The device as recited in claim 1,wherein the base layer includes a metal silicide.